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Память и накопители
✔ 64GB Storage Capacity
✔ 1 x USB-A Connector
✔ USB 3.2 Gen 1 Interface
✔ Swivel Cap Design
✔ Windows, macOS, Linux & ChomeOS Support
Память и накопители
✔ High-speed PCIe 4.0 interface: Delivers rapid data transfer rates for modern systems.
✔ Advanced 3D NAND technology: Ensures better storage density and long-term reliability.
✔ Impressive 4,700 MB/s read speed: Accelerates boot times and application loading.
✔ Reliable 160 TBW endurance: Provides a durable lifespan for consistent daily workloads.
✔ Compact M.2 2280 form factor: Fits perfectly in thin laptops and desktop motherboards.
Память и накопители
✔ 64GB Storage Capacity
✔ USB 3.2 Gen 1 Type-A Connector
✔ Moving Cap Design
✔ Key Ring Loop
Память и накопители
✔ 256GB Storage Capacity
✔ UHS-I / V30 / U3 / Class 10
✔ Max Read Speed: 100 MB/s
✔ Max Write Speed: 40 MB/s
✔ Min Write Speed: 30 MB/s
✔ Records Full HD and 4K Video
✔ Water / Drop / Magnet / X-Ray Proof
✔ Wear and Temperature Proof
✔ Endurance: up to 140,160 Hours
✔ Includes microSD to SD Adapter
Память и накопители
✔ 128GB Storage Capacity
✔ USB 3.2 Gen 1 Type-A Connection
✔ Keyring Loop
✔ Protective Cap
✔ Works with Windows, Mac, Linux & Chrome
Память и накопители
✔ 4TB Storage Capacity
✔ M.2 2280 Form Factor
✔ PCIe 4.0 x4 / NVMe 2.0 Interface
✔ Sequential Reads up to 7450 MB/s
✔ Sequential Writes up to 6900 MB/s
✔ Up to 2400TB TBW (Total Bytes Written)
✔ Samsung V-NAND Flash Technology
✔ AES 256-Bit Encryption
Память и накопители
✔ 1TB Storage Capacity
✔ M.2 2280 Form Factor
✔ PCIe 5.0 x4 / NVMe 2.0 Interface
✔ Sequential Reads up to 14,800 MB/s
✔ Sequential Writes up to 13,400 MB/s
✔ 1GB LPDDR4x Cache Memory
✔ Endurance (TBW): 600TB
✔ Samsung V-NAND TLC Flash Technology
✔ Samsung In-House Controller
✔ AES 256-Bit Encryption
Память и накопители
✔ 500GB Storage Capacity
✔ 2.5" Form Factor
✔ SATA III 6 Gb/s Interface
✔ 512MB LPDDR4 Cache
✔ Up to 560 MB/s Sequential Read Speed
✔ Up to 530 MB/s Sequential Write Speed
✔ Samsung MKX Controller
✔ MLC V-NAND Technology
✔ MTBF Rating: 1.5 Million Hours
✔ Endurance up to 300TB
Память и накопители
✔ 4TB Storage Capacity
✔ M.2 2280 Form Factor
✔ PCIe 4.0 x4 / NVMe 2.0 Interface
✔ Sequential Reads up to 7450 MB/s
✔ Sequential Writes up to 6900 MB/s
✔ Up to 2400TB TBW (Total Bytes Written)
✔ PlayStation 5 Compatible Heatsink
✔ Samsung V-NAND Flash Technology
✔ AES 256-Bit Encryption
Память и накопители
✔ Designed for Handheld Gaming Consoles
✔ 512GB Storage Capacity
✔ UHS-I / V30 / U3 / A2 / Class 10
✔ Max Read Speed: 160 MB/s
✔ Max Write Speed: 90 MB/s
✔ Min Write Speed: 30 MB/s
✔ Records Full HD, 3D, and 4K Video
✔ Resists Water, Temperatures, and X-Rays
✔ Resists Magnets, Drops, and Wear